| PART |
Description |
Maker |
| JS28F256P30B95A RD48F4000P0ZBQ0 JS28F128P30T85A TE |
Numonyx StrataFlash Embedded Memory
Numonyx?StrataFlash? Embedded Memory (P30)
|
Micron Technology
Numonyx B.V
|
| PH28F128L18T85 PH28F256L18T85 PH28F640L18T85 JZ48F |
StrataFlash Wireless Memory 无线的StrataFlash存储
StrataFlash Wireless Memory 8M X 16 FLASH 1.8V PROM, 85 ns, PBGA56
|
Intel Corp.
Intel, Corp.
|
| 28F640J5 28F320J5 |
5 V Intel StrataFlash Memory(5V 64M位英特尔StrataFlash闪速存储器)
5 Volt Intel StrataFlash Memory(5 V 32M位英特尔StrataFlash存储
|
Intel Corp.
|
| JS48F4400P0R0C0 JS48F4400P0R0Q0 JS48F4400P0R0W0 JS |
StrataFlash垄莽 Cellular Memory
StrataFlash庐 Cellular Memory
StrataFlash? Cellular Memory
StrataFlash? Cellular Memory
|
Numonyx B.V
http://
|
| GE28F256L18T85 GE28F640L18T85 GE28F128L18T85 NZ48F |
StrataFlash Wireless Memory
|
Intel Corp.
Intel Corporation
|
| 28F640J3A |
(28FxxxJ3A) Intel StrataFlash Memory
|
Intel Corporation
|
| PF48F4400M0Y0T0 |
Numonyx StrataFlash Wireless Memory
|
Numonyx B.V
|
| 28F128J3A 28F320J3A |
(28FxxxJ3A) Intel StrataFlash Memory
|
Intel Corporation
|
| 313295-04 PF38F5070M0Y0T0 |
Numonyx StrataFlash Wireless Memory
|
Numonyx B.V
|
| AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes
CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
| TE28F640J3 TE28F256J3 TE28F320J3C-110 TE28F128J3A- |
8M X 16 FLASH 2.7V PROM, 120 ns, PDSO56
Intel StrataFlash Memory (J3)
Strata Flash Memory 256M
256M Strata Flash Memory
|
NUMONYX
Intel Corporation
|
| TE28F128J3D |
Embedded Flash Memory
|
Intel
|
